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| LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon MMBT3906LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V CBO V EBO IC Value - 40 - 40 - 5.0 - 200 Unit Vdc Vdc Vdc mAdc CASE 318-08, STYLE 6 SOT- 23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board(1) T A =25 C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 R JA PD 556 300 2.4 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C R JA T J , T stg DEVICE MARKING MMBT3906LT1 = 2A ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) Characteristic Symbol V (BR)CEO - 40 V (BR)CBO - 40 V (BR)EBO - 5.0 I BL -- I CEX -- - 50 - 50 nAdc -- nAdc -- Vdc -- Vdc Min Max Unit Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (3) (I C = -1.0 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = -10 Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = -10 Adc, I C = 0) Base Cutoff Current (V CE = -30 Vdc, V EB = -3.0 Vdc) Collector Cutoff Current (V CE = -30 Vdc, V EB = -3.0 Vdc) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Width <300 s; Duty Cycle <2.0%. O12-1/5 LESHAN RADIO COMPANY, LTD. MMBT3906LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE 60 80 100 60 30 VCE(sat) -- -- V BE(sat) Min Max Unit -- ON CHARACTERISTICS (2) DC Current Gain (I C = -0.1 mAdc, V CE = -1.0 Vdc) (I C = -1.0 mAdc, V CE = -1.0 Vdc) (I C = -10 mAdc, V CE = -1.0 Vdc) (I C = -50 mAdc, V CE = -1.0 Vdc) (I C = -100 mAdc, V CE = -1.0 Vdc) Collector-Emitter Saturation Voltage (I C = -10 mAdc, I B = -1.0 mAdc) (I C = -50 mAdc, I B = -5.0 mAdc) Base-Emitter Saturation Voltage (I C = -10 mAdc, I B = -1.0 mAdc) (I C = -50 mAdc, I B = -5.0 mAdc) -- -- 300 -- -- Vdc - 0.25 - 0.4 Vdc - 0.65 -- - 0.85 - 0.95 SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (I C = -10 mAdc, V CE= -20 Vdc, f = 100 MHz) Output Capacitance (V CB= -5.0 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = -0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance (V CE= -10 Vdc, I C = -1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE= -10 Vdc, I C = -1.0 mAdc, f = 1.0 kHz) Small-Signal Current Gain (V CE= -10 Vdc, I C = -1.0 mAdc, f = 1.0 kHz) Output Admittance (V CE= -10 Vdc, I C = -1.0 mAdc, f = 1.0 kHz) Noise Figure (V CE= -5.0Vdc, I C = -100 Adc, R S =1.0 k, f =1.0kHz) fT 250 C obo -- C ibo -- h ie 2.0 h re 0.1 h fe 100 * h oe 3.0 NF -- 4.0 60 dB 400 mhos 10 -- 12 X 10 -4 MHz -- pF 4.5 pF 10 k SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = - 3.0 Vdc, V BE = 0.5 Vdc, I C = -10 mAdc, I B1 = -1.0 mAdc) (V CC = -3.0 Vdc, I C = -10 mAdc, I B1 = I B2 = -1.0 mAdc) td td ts tf -- -- -- -- 35 35 225 75 ns ns 3. Pulse Test: Pulse Width <300 s; Duty Cycle <2.0%. O12-2/5 LESHAN RADIO COMPANY, LTD. MMBT3906LT1 3V + 9.1 V <1ns 3V 275 + 0.5 V 0 <1 ns 275 10 k 0 10 k C S < 4.0 pF* 1N916 t C S < 4.0 pF* - 10.6 V 300ns DUTY CYCLE = 2% 10 < t 1 < 500 s DUTY CYCLE = 2% 1 10.9 V *Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS T J = 25C T J = 125C 10.0 5000 3000 7.0 5.0 2000 V CC = 40 V I C / I B = 10 C obo C ibo Q, CHARGE (pC) CAPACITANCE (pF) 1000 700 500 3.0 300 200 100 70 2.0 QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Capacitance 500 300 200 100 70 50 500 Figure 4. Charge Data I C /I B = 10 V CC = 40 V I B1 = I B2 I C /I B = 20 t r , FALL TIME (ns) 100 70 50 30 20 10 7 5 300 200 t r @V CC=3.0V 15 V 40 V 2.0 V t d@V OB=0V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 TIME (ns) 30 20 10 7 5 I C /I B = 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Fall Time O12-3/5 LESHAN RADIO COMPANY, LTD. MMBT3906LT1 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V CE = - 5.0 Vdc, T A = 25C, Bandwidth = 1.0 Hz) 12 10 SOURCE RESISTANCE= 200 I C = 1.0 mA NF, NOISE FIGURE (dB) 14 f = 1.0 kHz 12 I C = 1.0 mA I C = 0.5 mA NF, NOISE FIGURE (dB) 8 SOURCE RESISTANCE= 200 I C = 0.5 mA SOURCE RESISTANCE =1.0k I C = 50 A 10 8 6 4 2 0 6 4 I C = 50 A I C = 100 A 2 SOURCE RESISTANCE= 500 I C = 100 A 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f, FREQUENCY (kHz) R g, SOURCE RESISTANCE (k) Figure 7. Noise Figure Figure 8. Noise Figure h PARAMETERS (V CE = 10 Vdc, f = 1.0 kHz, T A = 25C) h oe , OUTPUT ADMITTANCE ( mhos) 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 300 100 50 200 h fe, DC CURRENT GAIN 20 10 100 70 50 5 2 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 30 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 9. Current Gain 20 10 Figure 10. Output Admittance h re, VOLTAGE FEEDBACK RATIO (X 10 -4 ) 10 7.0 5.0 h ie, INPUT IMPEDANCE (k) 5.0 3.0 2.0 2.0 1.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 11. Input Impedance Figure 12. Voltage Feedback Ratio O12-4/5 LESHAN RADIO COMPANY, LTD. MMBT3906LT1 TYPICAL STATIC CHARACTERISTICS 2.0 h FE , DC CURRENT GAIN (NORMALIZED) T J = +125C 1.0 0.7 0.5 V CE = 1.0 V +25C -55C 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C , COLLECTOR CURRENT (mA) Figure 13. DC Current Gain V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 T J = 25C 0.8 I C=1.0 mA 0.6 10 mA 30 mA 100 mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I B , BASE CURRENT (mA) Figure 14. Collector Saturation Region 1.2 1.0 T J = 25C 1.0 V BE(sat) @ I C /I B =10 0.5 V BE @ V CE =1.0 V V, VOLTAGE ( VOLTS ) 0.8 COEFFICIENT (mV/ C) VC for V CE(sat) +25C TO +125C 0 -55C TO +25C - 0.5 0.6 +25C TO +125C -1.0 0.4 V CE(sat) @ I C /I B =10 0.2 -55C TO +25C -1.5 VB for V BE(sat) 0 1.0 2.0 5.0 10 20 50 100 200 -2.0 0 20 40 60 80 100 120 140 160 180 200 C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 15. "ON" Voltages Figure 16. Temperature Coefficients O12-5/5 |
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